Analytical modeling of the CMOS-like a-Si:H TFT inverter circuit

Author

Chung, Kyo Y. ; Neudeck, Gerold W. ; Bare, Harold F.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

23

Issue

2

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

566

Lastpage

572

Abstract

The transfer characteristics of a CMOS-like hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) inverter circuit are analyzed. Accurate analytical expressions for the sheet conductance of the ambipolar a-Si:H TFT are simplified and applied to the CMOS-like TFT inverter circuit. The inverter circuit is composed of only one type of ambipolar a-Si:H TFT that is used for both the driver and load transistors. The CMOS-like inverter circuit has a very high small-signal gain compared to other types of TFT inverter circuits. An analytically calculated voltage transfer curve is almost identical to that obtained by the graphical method and shows very close agreement with the measured transfer curve

Keywords

field effect integrated circuits; integrated circuit technology; invertors; semiconductor device models; thin film transistors; CMOS-like TFT inverter circuit; ambipolar a-Si:H TFT; amorphous Si:H transistors; analytical expressions; sheet conductance; small-signal gain; thin film transistor invertor circuit; transfer characteristics; voltage transfer curve; Amorphous silicon; Analytical models; Circuit analysis; Driver circuits; Inverters; Liquid crystal displays; Logic circuits; Thin film circuits; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.1023

Filename

1023