Title :
Low-frequency dispersion characteristics of GaN HFETs
Author :
Kruppa, W. ; Binari, S.C. ; Doverspike, K.
Author_Institution :
SFA Inc., Landover, MD, USA
fDate :
10/26/1995 12:00:00 AM
Abstract :
The low-frequency transconductance and output resistance of AlN/GaN HFETs have been examined as functions of temperature. Dispersive characteristics were found which are indicative of trapping activity in the GaN channel layer. Traps with an activation energy near 1 eV were evident
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium compounds; junction gate field effect transistors; wide band gap semiconductors; AlN-GaN; AlN/GaN HFETs; activation energy; low-frequency dispersion; output resistance; transconductance; traps;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951298
