• DocumentCode
    798209
  • Title

    Microwave plasma grown oxynitride using nitrous oxide

  • Author

    Mukhopadhyay, M. ; Ray, S.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • fDate
    10/26/1995 12:00:00 AM
  • Firstpage
    1953
  • Lastpage
    1954
  • Abstract
    The microwave N2O plasma oxidation of Si(100) at low temperature (<200°C) is reported. The presence of nitrogen slightly inside the SiO2 layer has been observed by X-ray photoelectron spectroscopy (XPS). Electrical and interfacial properties are also discussed
  • Keywords
    X-ray photoelectron spectra; elemental semiconductors; nitridation; oxidation; plasma deposition; silicon; 200 C; N2O; Si; Si(100); SiO2; SiON; X-ray photoelectron spectroscopy; electrical properties; interfacial properties; low temperature growth; microwave plasma oxidation; nitrous oxide; oxynitride film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951332
  • Filename
    490683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798209