DocumentCode :
798215
Title :
Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low- 
Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer
Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation LayerAuthor :
Chang, Ta-Shan ; Chang, Ting-Chang ; Liu, Po-Tsun ; Chang, Tien-Shan ; Tu, Chun-Hao ; Yeh, Feng-Sheng
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Volume :
27
Issue :
11
fYear :
2006
Firstpage :
902
Lastpage :
904
Abstract :
A low-dielectric-constant (low-k)-material siloxane-based hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si : H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/Vmiddots and a subthreshold swing of 0.68 V
Keywords :
amorphous semiconductors; hydrogenation; low-k dielectric thin films; passivation; silicon; silicon compounds; thin film transistors; 0.68 V; Si:H; SiN; TFT liquid-crystal display; field-effect mobility; hydrogen silsesquioxane; hydrogenated amorphous-silicon TFT; light transmittance; low-k material; passivation layer; planarization; silicon nitride; Apertures; Brightness; Delay effects; Electrodes; Hydrogen; Liquid crystal displays; Passivation; Planarization; Silicon compounds; Thin film transistors; Low-dielectric constant; passivation; thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.884721
Filename :
1715461
Link To Document :
