Title :
Ultra-large grain growth of Si films on glassy substrate
Author :
Ishihara, R. ; Matsumura, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
10/26/1995 12:00:00 AM
Abstract :
Polycrystal-Si films with maximum grain size of more than 10 μm have been successfully formed on quartz substrate for the first time using a novel double-pulse and dual-beam excimer-laser crystallisation method. The average grain size was found to be inversely proportional to the square of the average solidification velocity of the Si film
Keywords :
elemental semiconductors; grain growth; grain size; laser deposition; semiconductor growth; semiconductor thin films; silicon; Si; SiO2; double-pulse dual-beam excimer-laser crystallisation; glassy substrate; grain size; polycrystal-Si films; quartz; solidification velocity; ultra-large grain growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951290
