• DocumentCode
    798226
  • Title

    Ultra-large grain growth of Si films on glassy substrate

  • Author

    Ishihara, R. ; Matsumura, M.

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    31
  • Issue
    22
  • fYear
    1995
  • fDate
    10/26/1995 12:00:00 AM
  • Firstpage
    1956
  • Lastpage
    1957
  • Abstract
    Polycrystal-Si films with maximum grain size of more than 10 μm have been successfully formed on quartz substrate for the first time using a novel double-pulse and dual-beam excimer-laser crystallisation method. The average grain size was found to be inversely proportional to the square of the average solidification velocity of the Si film
  • Keywords
    elemental semiconductors; grain growth; grain size; laser deposition; semiconductor growth; semiconductor thin films; silicon; Si; SiO2; double-pulse dual-beam excimer-laser crystallisation; glassy substrate; grain size; polycrystal-Si films; quartz; solidification velocity; ultra-large grain growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951290
  • Filename
    490685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=798226