DocumentCode
798240
Title
700-V 1.0- 
Buried Gate SiC-SIT (SiC-BGSIT)
Author
Tanaka, Yasunori ; Okamoto, Mitsuo ; Takatsuka, Akio ; Arai, Kazuo ; Yatsuo, Tsutomu ; Yano, Koji ; Kasuga, Masanobu
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol.
Volume
27
Issue
11
fYear
2006
Firstpage
908
Lastpage
910
Abstract
Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p+ gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage VBR and specific on-resistance RonS of the fabricated SiC-BGSIT were 700 V at a gate voltage VG=-12V, and 1.0 mOmegamiddotcm2 at a current density JD=200A/cm2 and VG=2.5V, respectively. This RonS is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs
Keywords
III-V semiconductors; epitaxial growth; gallium compounds; semiconductor device breakdown; silicon compounds; static induction transistors; wide band gap semiconductors; -12 V; 2.5 V; 700 V; GaN; HEMT; SiC; buried gate structures; epitaxial growth; on-resistance; power switching devices; silicon carbide static induction transistors; trench dry etching; trench structure; Crystals; Current density; Electrodes; Fabrication; HEMTs; MODFETs; Power semiconductor switches; Scanning electron microscopy; Silicon carbide; Voltage; Buried gate; JFET; silicon carbide; static induction transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.884724
Filename
1715463
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