High-field mobility effects in reoxidized nitrided oxide (ONO) transistors

Author

Cable, James S. ; Woo, Jason C S

Author_Institution

TRW Microelectron. Center, Redondo Beach, CA, USA

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

607

Lastpage

613

Abstract

The high-field mobility behavior of silicon MOSFETs fabricated with reoxidized nitrided oxide (ONO) gate dielectrics has been investigated. Measurements have been performed at both room temperature and 77 K on both n- an p-channel FETs, for both ONO and conventional SiO ₂ films. While the peak electron mobility is much higher for standard SiO₂, a crossover occurs in the high-field region beyond which ONO transistors exhibit higher mobility. The crossover voltage is reduced at 77 K. Measurements intended to gain further insight into this phenomenon suggest that differences in surface roughness scattering, or the buried-channel nature of an ONO NMOS transistor, are the most likely explanations for the high-field mobility behavior observed

Keywords

carrier mobility; dielectric thin films; insulated gate field effect transistors; nitridation; oxidation; semiconductor-insulator boundaries; 77 K; MOSFETs; NMOS transistors; ONO transistors; PMOS transistors; SiO₂ gate dielectric; SiO_xN_y gate dielectric; buried-channel; crossover voltage; electron mobility; gate dielectrics; high-field mobility behavior; reoxidized nitrided oxide transistors; room temperature; surface roughness scattering; Dielectric measurements; Electron mobility; FETs; Gain measurement; MOSFETs; Performance evaluation; Rough surfaces; Silicon; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123485

Filename

123485