Title :
A Pt/Ga2O3-ZnO/SiC Schottky diode-based hydrocarbon gas sensor
Author :
Trinchi, Adrian ; Galatsis, K. ; Wlodarski, W. ; Li, Y.X.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia
Abstract :
In this paper, a novel metal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga2O3-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responses were stable and repeatable at operating temperatures between 300 and 600°C. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.
Keywords :
MIS devices; Schottky diodes; electric sensing devices; gallium compounds; gas sensors; platinum; silicon compounds; sol-gel processing; thermal stability; wide band gap semiconductors; zinc compounds; 2 to 8 mA; 300 to 600 C; Pt-Ga2O3ZnO-SiC; Pt/Ga2O3-ZnO/SiC Schottky diode-based hydrocarbon gas sensor; Schottky diode; catalytic layer; diode barrier height; diode bias; hydrocarbon gas-sensing; metal-reactive insulator-silicon carbide device; operating ambients; operating temperatures; propene concentrations; propene gas; sensor constant currents; sensor response; sol-gel prepared Ga2O3-ZnO layer; stable repeatable responses; Gas detectors; Gas insulation; Hydrocarbons; Metal-insulator structures; Monitoring; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature sensors; Zinc oxide;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2003.817670
