DocumentCode
798694
Title
Magnetization Reversal Mechanism in γ-Fe2 O3 Thin Films
Author
Ishii, O. ; Yoshimura, F. ; Hirono, S.
Author_Institution
NTT.
Volume
6
Issue
9
fYear
1991
Firstpage
730
Lastpage
736
Abstract
Magnetization reversal was studied in Co-Ti-Cu doped γ-Fe2 O3 thin films, prepared by sputtering and heat treatment. The crystal grain size dependence of the coercivity suggested that the fanning mode is the most likely mechanism of reversal. The coercivity decreases with decreasing grain size because thermally activated magnetization reversal takes place. Rotational hysteresis integrals for the films ranged from 1.47 to 1.58, equal to those for the fanning mode.
Keywords
Coercive force; Grain size; Heat treatment; Magnetic films; Magnetic hysteresis; Magnetic recording; Magnetics Society; Magnetization reversal; Sputtering; Transistors;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1991.4565243
Filename
4565243
Link To Document