A wideband low noise amplifiers design incorporating the CMRC circuitry

Author

Yang, Shing-Lung Steven ; Xue, Quan ; Luk, Kwai-Man

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, China

Volume

15

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

315

Lastpage

317

Abstract

An impedance bandwidth enhancement technique for tuning a low noise amplifier (LNA) is presented. With the use of the compact microstrip resonant cell (CMRC) at the emitter pins of a bipolar junction transistor (BJT), the impedance bandwidth achieved is about 95%, for a simple single stage amplifier design. The LNA attains a gain of about 15 dB; also a low noise figure of 1.16 dB at 2.1GHz and an average noise figure of about 1.5 dB across the operation bands have been achieved.

Keywords

bipolar transistors; microstrip resonators; microwave amplifiers; wideband amplifiers; 1.16 dB; 1.5 dB; 15 dB; 2.1 GHz; CMRC circuitry; bipolar junction transistor; compact microstrip resonant cell; emitter pins; impedance bandwidth enhancement; low-noise amplifier; microwave amplifiers; single stage amplifier design; wideband RF systems; wireless communication; Bandwidth; Broadband amplifiers; Circuit noise; Circuit optimization; Impedance; Low-noise amplifiers; Microstrip; Noise figure; Pins; Resonance; Low-noise amplifier (LNA); microwave amplifiers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.847667

Filename

1427728