Title :
Sub-half-micrometer concave MOSFET with double LDD structure
Author :
Hieda, Katsuhiko ; Sunouchi, Kazumasa ; Takato, Hiroshi ; Nitayama, Akihiro ; Horiguchi, Fumio ; Masuoka, Fujio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
3/1/1992 12:00:00 AM
Abstract :
The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to the double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFETs
Keywords :
doping profiles; insulated gate field effect transistors; reliability; 5 V; 5-V supply voltage; concave MOSFET; current drivability; double LDD structure; drain sustaining voltage; impurity profile; lightly doped drain; n+-n--p--p; reliability; short-channel effect; subhalf-micron devices; Annealing; Doping; Etching; Fabrication; Impurities; MOSFET circuits; Silicon; Thermal resistance; Threshold voltage; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
