5-GHz CMOS LC VCOs with wide tuning ranges

Author

Byunghun Min ; Hanggeun Jeong

Author_Institution

Dept. of Electron. Eng., Chonbuk Nat. Univ., Jeonbuk, South Korea

Volume

15

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

336

Lastpage

338

Abstract

A 4.8-GHz LC voltage-controlled oscillator (VCO) optimized for maximum tuning range was designed and fabricated using 0.25-μm 1P5M CMOS process. The optimized design used an inverse proportionality between the two parasitic capacitances of the inductor and the MOS transistors for minimizing the parasitic capacitance at the oscillation node. The fabricated LC VCO has a wide tuning range of 20.3% from 4.32 GHz to 5.3 GHz with a power dissipation of 7.3 mW. This tuning range performance is comparable to, or better than, those of the reported CMOS LC VCOs in 5-GHz band. The measured phase noise is -82 dBc/Hz and -114.6 dBc/Hz at 100 KHz and 1-MHz offset, respectively.

Keywords

CMOS integrated circuits; MOSFET; capacitance; circuit tuning; phase noise; radiofrequency oscillators; voltage-controlled oscillators; wireless LAN; 0.25 micron; 100 KHz; 4.32 to 5.3 GHz; 7.3 mW; CMOS LC VCO; MOS transistors; inductor; optimized design; oscillation node; parasitic capacitance; phase noise; power dissipation; tuning range performance; voltage-controlled oscillator; CMOS process; Design optimization; Inductors; MOSFETs; Noise measurement; Parasitic capacitance; Power dissipation; Process design; Tuning; Voltage-controlled oscillators; CMOS; parasitic capacitance; tuning range; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.847701

Filename

1427735