DocumentCode
798984
Title
An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
Author
Blakey, Peter A. ; Joardar, Kuntal
Author_Institution
Motorola Inc., Mesa, AZ, USA
Volume
39
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
740
Lastpage
742
Abstract
An analytic theory of the impact of velocity overshoot on the drain current characteristics of field-effect transistors is presented. Good agreement between the theory and experimental data is demonstrated for silicon MOS devices. Some applications of the theory are outlined
Keywords
field effect transistors; semiconductor device models; FET; MOS devices; Si; drain characteristics; field-effect transistors; velocity overshoot; Circuits; Computational modeling; Design automation; Design for experiments; Design optimization; FETs; MOS devices; Numerical simulation; Silicon; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.123505
Filename
123505
Link To Document