The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

Author

Liou, L.L. ; Ebel, J. ; Huang, C.I.

Author_Institution

Wright Lab., Wright-Patterson AFB, OH, USA

Volume

39

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

742

Lastpage

745

Abstract

The offset voltage of an emitter-mesa AlGaAs-GaAs heterojunction bipolar transistor was obtained from the transistor´s current-voltage characteristics calculated using a two-dimensional numerical simulation with a current boundary condition at the base contact. The results show that the offset voltage strongly depends on the position of the emitter-base p-n junction and on the width of the emitter mesa

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; simulation; AlGaAs-GaAs; HBT; base contact; current boundary condition; current-voltage characteristics; emitter mesa width; emitter-base p-n junction; heterojunction bipolar transistors; junction position; offset voltage; two-dimensional numerical simulation; Boundary conditions; Charge carrier processes; Circuit simulation; Current density; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Numerical simulation; P-n junctions; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.123506

Filename

123506