Title :
Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]
Author :
Fulkerson, David E ; Fischetti, M.V. ; Laux, S.E.
Author_Institution :
Honeywell Syst. & Res. Center, Bloomington, MN, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
For the original article see ibid., vol.38, no.3, p.650-60 (1991). Using transistor transconductance as a measure of speed, M.V. Fischetti and S.E. Laux, the authors of the above-titled paper, conclude that GaAs technology does not offer any significant speed advantage over Si. However, the commenter points out that their contention is contradicted by the data in their paper which show that GaAs MESFETs have transconductance about twice that of Si MOSFETs for the short gate lengths considered. The use of transconductance rather than f/sub t/ as a measure for speed is also questioned. The authors defend their results.<>
Keywords :
Monte Carlo methods; insulated gate field effect transistors; semiconductor device models; GaAs; MESFETs; Monte Carlo simulation; Si; device speed; diamond; semiconductors; short gate lengths; submicron MOSFET; transistor transconductance; transport process simulation; zinc-blende structures; CMOS logic circuits; Capacitance; Delay; Gallium arsenide; Logic gates; MESFETs; MOSFETs; Paper technology; Transconductance; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
