• DocumentCode
    799086
  • Title

    Characterization of inductively coupled plasma using neural networks

  • Author

    Kim, Byungwhan ; Park, Sungjin

  • Author_Institution
    Dept. of Electron. Eng., Sejong Univ., Seoul, South Korea
  • Volume
    30
  • Issue
    2
  • fYear
    2002
  • fDate
    4/1/2002 12:00:00 AM
  • Firstpage
    698
  • Lastpage
    705
  • Abstract
    Hemispherical inductively coupled plasma (HICP) in a chlorine (Cl 2) discharge is qualitatively characterized using neural networks. Plasma attributes collected with Langmuir probe from a HICP etch system include electron density, electron temperature, and plasma potential. Process factors that were varied in a 24 full-factorial experiment include RF power, bias power, pressure, and Cl 2 flow rate. Their experimental ranges are 700-900 W, 5-10 mtorr, 20-80 W, and 60-120 sccm, for source power, pressure, bias power, and Cl2 flow rate, respectively. To validate models, eight experiments were additionally conducted. Root mean-squared prediction errors of optimized models are 0.288 (1011/cm3), 0.301 (eV), and 0.520 (V), for electron density, electron temperature, and plasma potential, respectively. Model behaviors were in good agreement with experimental data and reports. For electron temperature and plasma potential, interaction effects between factors were observed to be highly complex, depending on the factors as well as on their levels. A close match was observed between the models of electron temperature and plasma potential
  • Keywords
    Langmuir probes; chlorine; discharges (electric); neural nets; plasma density; plasma temperature; 0.301 eV; 0.520 V; 20 to 80 W; 5 to 10 mtorr; 700 to 900 W; Cl2; Cl2 discharge; Langmuir probe; RF power; electron density; electron temperature; hemispherical inductively coupled plasma; neural networks; optimized models; plasma potential; process factors; Electrons; Etching; Neural networks; Plasma applications; Plasma density; Plasma sources; Plasma temperature; Predictive models; Probes; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2002.1024272
  • Filename
    1024272