Finite element analysis of SiGe heterojunction devices

Author

Krishna, G.H.R. ; Aditya, Amit Kumar ; Chakrabarti, Nirmal B. ; Banerjee, Swapna

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Inst. of Technol., Kharagpur, India

Volume

14

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

803

Lastpage

814

Abstract

Two SiGe devices, a n⁺-n-p heterojunction diode and an n-p-n HBT have been analyzed using a two-dimensional bipolar device simulator which is based on the finite element method. The various shape functions used in the finite element formulations have been detailed. The dependence of the device characteristics on the various Ge mole-fraction material parameters has been studied. The variation of current gain of SiGe HBT with temperature is discussed

Keywords

Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; semiconductor device models; semiconductor diodes; semiconductor materials; Ge mole-fraction material parameters; SiGe; SiGe heterojunction devices; current gain; device characteristics; finite element analysis; finite element method; n-p-n HBT; n⁺-n-p heterojunction diode; shape functions; temperature dependence; two-dimensional bipolar device simulator; Analytical models; Electron mobility; Finite element methods; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Poisson equations; Silicon alloys; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.391728

Filename

391728