DocumentCode
799160
Title
Permeability of Fe-Si Films with Preferred Crystallographic Orientation
Author
Hosono, A. ; Shimada, Y.
Author_Institution
Tohoku University.
Volume
6
Issue
11
fYear
1991
Firstpage
953
Lastpage
959
Abstract
The initial permeability of Fe-Si polycrystalline thin films was investigated. Based on calculations of the magneto-crystalline anisotropy and initial permeability which assume that the magnetization is confined to a certain crystal plane, Fe-Si polycrystalline thin films oriented with the (111) plane parallel to the film plane are ´ expected to have a high permeability of about 5000. Fe-6.9 wt% Si films were deposited on three kinds of underlayer with three different crystal orientations. The initial permeability of Fe-Si films on ZnSe underlayers with (111) orientation is about 1700, which is higher than that of films with a (100) or (110) orientation.
Keywords
Anisotropic magnetoresistance; Crystallography; Magnetic anisotropy; Magnetic confinement; Magnetization; Permeability; Perpendicular magnetic anisotropy; Semiconductor films; Transistors; Zinc compounds;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1991.4565287
Filename
4565287
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