Title :
Novel Active ESD Clamps for High-Voltage Applications
Author :
Yiqun Cao ; Glaser, Ulrich
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
Large power MOS transistors (bigMOS) have potential electrostatic discharge (ESD) protection capabilities and are often used in actively controlled ESD clamps. In high-voltage and especially automotive applications ranging typically from 10 to 100 V operation voltage, statically triggered active ESD clamps are often used due to their false triggering safety. This paper presents novel statically triggered active ESD clamps, which rely on advanced trigger circuits optimizing the gate control of the bigMOS. With enhanced tailoring to the application requirements, the active ESD clamps substantially improve clamp area efficiency and significantly reduce ESD window requirements.
Keywords :
clamps; electrostatic discharge; power MOSFET; trigger circuits; ESD protection capability; ESD window requirement; actively controlled ESD clamp; advanced trigger circuit; automotive application; bigMOS; clamp area efficiency; electrostatic discharge protection; false triggering safety; gate control; high-voltage application; power MOS transistor; statically triggered active ESD clamp; voltage 10 V to 100 V; Active clamps; bigMOS; controlled snapback; electrostatic discharges (ESDs); human body model (HBM); safe operating area (SOA); statically triggered clamps; transmission-line pulse (TLP);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2013.2256910