Novel RF process monitoring test structure for silicon devices

Author

Sia, Choon Beng ; Ong, Beng Hwee ; Lim, Kok Meng ; Kiat Seng Yeo ; Do, Manh Anh ; Ma, Jian-Guo ; Alam, Tariq

Author_Institution

Adv. RFIC(S) Pte. Ltd, Singapore

Volume

18

Issue

2

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

246

Lastpage

254

Abstract

This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.

Keywords

CMOS integrated circuits; MIM devices; MIS devices; MOSFET; process monitoring; semiconductor process modelling; silicon; varactors; MIM capacitor; MOS varactor; MOSFET; RF CMOS process monitoring test structure; Si; capacitance measurement; dc characteristics; metal-insulator-metal capacitor; radio frequency characteristics; scribe line; silicon devices; Circuit synthesis; Circuit testing; Foundries; Integrated circuit modeling; MIM capacitors; MOSFET circuits; Monitoring; Radio frequency; Silicon devices; Varactors; MIM capacitor; MOS varactor and interconnect; RFCMOS; process monitoring; scribe line;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2005.845095

Filename

1427792