Title :
Novel RF process monitoring test structure for silicon devices
Author :
Sia, Choon Beng ; Ong, Beng Hwee ; Lim, Kok Meng ; Kiat Seng Yeo ; Do, Manh Anh ; Ma, Jian-Guo ; Alam, Tariq
Author_Institution :
Adv. RFIC(S) Pte. Ltd, Singapore
fDate :
5/1/2005 12:00:00 AM
Abstract :
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
Keywords :
CMOS integrated circuits; MIM devices; MIS devices; MOSFET; process monitoring; semiconductor process modelling; silicon; varactors; MIM capacitor; MOS varactor; MOSFET; RF CMOS process monitoring test structure; Si; capacitance measurement; dc characteristics; metal-insulator-metal capacitor; radio frequency characteristics; scribe line; silicon devices; Circuit synthesis; Circuit testing; Foundries; Integrated circuit modeling; MIM capacitors; MOSFET circuits; Monitoring; Radio frequency; Silicon devices; Varactors; MIM capacitor; MOS varactor and interconnect; RFCMOS; process monitoring; scribe line;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2005.845095
