Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET

Author

Hong, Byoung Hak ; Jung, Young Chai ; Rieh, Jae Sung ; Hwang, Sung Woo ; Cho, Keun Hwi ; Yeo, K.H. ; Suk, S.D. ; Yeoh, Y.Y. ; Li, M. ; Kim, Dong-Won ; Park, Donggun ; Oh, Kyung Seok ; Lee, Won-Seong

Author_Institution

Res. Center for Time Domain Nano-Functional Devices (TiNa), Korea Univ., Seoul, South Korea

Volume

8

Issue

6

fYear

2009

Firstpage

713

Lastpage

717

Abstract

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

Keywords

MOSFET; bound states; elemental semiconductors; nanoelectronics; nanowires; semiconductor quantum wires; silicon; tunnelling; Si; bound-state energy spacing; charging energy; current oscillations; cylindrical shaped gate-all-around silicon nanowire PMOSFET; electrical transport measurement; light-hole Bohr radius; nanowire quantum dots; p-channel MOSFET; single acceptor transport; single hole tunneling; temperature 4.2 K; Gate-all-around (GAA); silicon nanowire FET (SNWFET); single-acceptor atom; temperature dependence;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2009.2021844

Filename

4907082