Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation

Author

Gai Liu ; Gang Du ; Tiao Lu ; Xiaoyan Liu ; Pingwen Zhang ; Xing Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

12

Issue

2

fYear

2013

fDate

Mar-13

Firstpage

168

Lastpage

173

Abstract

In this study, we simulate double-gate MOSFET using a 2-D direct Boltzmann transport equation solver. Simulation results are interpreted by quasi-ballistic theory. It is found that the relation between average carrier velocity at virtual source and back-scattering coefficient needs to be modified due to the oversimplified approximations of the original model. A 1-D potential profile model also needs to be extended to better determine the kT-layer length. The key expression for back-scattering coefficient is still valid, but a field-dependent mean free path is needed to be taken into account.

Keywords

Boltzmann equation; MOSFET; 1D potential profile model; 2D direct Boltzmann transport equation solver; asymmetric DG-MOSFET; average carrier velocity; backscattering coefficient; double-gate MOSFET; field-dependent mean free path; kT-layer length; quasiballistic transport; virtual source; Boltzmann equation; Logic gates; Mathematical model; Scattering; Semiconductor device modeling; Simulation; Boltzmann transport equation (BTE); double-gate FETs; numerical simulation; quasi-ballistic transport;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2013.2237924

Filename

6403553