Modeling the Well-Edge Proximity Effect in Highly Scaled MOSFETs

Author

Sheu, Yi-Ming ; Su, Ke-Wei ; Tian, Shiyang ; Yang, Sheng-Jier ; Wang, Chih-Chiang ; Chen, Ming-Jer ; Liu, Sally

Author_Institution

Device Eng. Div., Taiwan Semicond. Manuf. Co., Hsinchu

Volume

53

Issue

11

fYear

2006

Firstpage

2792

Lastpage

2798

Abstract

The well-edge proximity effect caused by ion scattering during implantation in highly scaled CMOS technology is explored from a physics and process perspective. Technology computer-aided design (TCAD) simulations together with silicon wafer experiments have been conducted to investigate the impact of this effect. The ion scattering model and TCAD simulations provided a physical understanding of how the internal changes of the MOSFETs are formed. A new compact model for SPICE is proposed using physics-based understanding and has been calibrated using experimental silicon test sets

Keywords

MOSFET; SPICE; ion implantation; semiconductor device models; surface collisions; technology CAD (electronics); CMOS wells; MOSFET; SPICE; TCAD simulations; compact model; ion implantation; ion scattering; well-edge proximity effect; CMOS process; CMOS technology; Computational modeling; Design automation; MOSFETs; Physics; Proximity effect; Scattering; Semiconductor device modeling; Silicon; CMOS wells; MOSFETs; SPICE model; high-energy ion implantation; ion scattering; technology computer-aided design (TCAD) simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.884070

Filename

1715624