High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique

Author

Irisawa, Toshifumi ; Numata, Toshinori ; Tezuka, Tsutomu ; Usuda, Koji ; Hirashita, Norio ; Sugiyama, Naoharu ; Toyoda, Eiji ; Takagi, Shin-ichi

Author_Institution

MIRAI-ASET, Kawasaki

Volume

53

Issue

11

fYear

2006

Firstpage

2809

Lastpage

2815

Abstract

Novel uniaxially strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing lateral (uniaxial) strain-relaxation process on globally (biaxially) strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator pMOSFETs are observed in SGOI pMOSFET. This high mobility enhancement is maintained in high vertical effective fields as well as in short-channel devices. As a result, significant I_ON enhancement of 80% is demonstrated in 40-nm gate-length uniaxially strained SGOI pMOSFET

Keywords

Ge-Si alloys; MOSFET; carrier mobility; nanotechnology; silicon-on-insulator; 40 nm; SGOI pMOSFET; SiGe; SiGe-on-insulator; high-mobility channel; lateral-strain-relaxation technique; mobility enhancement; silicon-on-insulator; uniaxial stress; CMOS technology; Capacitive sensors; Compressive stress; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Silicon on insulator technology; Strain control; Uniaxial strain; High-mobility channel; MOSFET; Si-on-insulator (SOI); SiGe-on-insulator (SGOI); strain relaxation; strained SiGe; uniaxial stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.884078

Filename

1715626