Title :
Nitride-based flip-chip ITO LEDs
Author :
Chang, S.J. ; Chang, C.S. ; Su, Y.K. ; Lee, C.T. ; Chen, W.S. ; Shen, C.F. ; Hsu, Y.P. ; Shei, S.C. ; Lo, H.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/2005 12:00:00 AM
Abstract :
Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.
Keywords :
flip-chip devices; indium compounds; light emitting diodes; printed circuits; semiconductor device manufacture; 14.5 mW; 20 mA; 3.32 V; ITO LEDs; In2-xSnO3-y; forward voltage; nitride-based flip-chip; output power; Gallium nitride; Gold; Indium tin oxide; LED lamps; Light emitting diodes; Photonic band gap; Power generation; Semiconductor diodes; Semiconductor materials; Voltage; Flip-chip; GaN; indium–tin–oxide (ITO); light-emitting diode (LED);
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2005.846941
