• DocumentCode
    800268
  • Title

    Structures and Magnetocrystalline Anisotropy of Single Crystal Permalloy Films Deposited by Sputtering Method

  • Author

    Narishige, S. ; Tadokoro, S. ; Mitsuoka, K. ; Sugita, Y.

  • Author_Institution
    Hitachi, Ltd.
  • Volume
    7
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    395
  • Lastpage
    402
  • Abstract
    Single-crystal permalloy films were grown epitaxially on (001) GaAs substrates by sputtering. The relationship between the crystal orientations of the permalloy and GaAs were (001) NiFe // (001) GaAs, ≪100≫ NiFe // ≪110≫ GaAs. The crystal structures of permalloy films were deformed from cubic to tetragonal; films with positive and negative tetragonal strain have small and large respective unit cell volumes. Films with a small lattice constant in the film plane have a large strain distribution. The magnetocrystalline anisotropy of films with a large strain distribution is small, and that of films with a negative tetragonal strain is large.
  • Keywords
    Anisotropic magnetoresistance; Gallium arsenide; Magnetic anisotropy; Magnetic field induced strain; Magnetic films; Magnetic materials; Magnetostriction; Perpendicular magnetic anisotropy; Sputtering; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1992.4565404
  • Filename
    4565404