Wavelength Modulation Over 500 kHz of Micromechanically Tunable InP-Based VCSELs With Si-MEMS Technology

Author

Yano, Tetsuo ; Saitou, Hiroki ; Kanbara, Nobuhiko ; Noda, Ryuichiro ; Tezuka, Shin-ichirou ; Fujimura, Naoyuki ; Ooyama, Masaya ; Watanabe, Tetsuya ; Hirata, Takaaki ; Nishiyama, Nobuhiko

Author_Institution

Adv. Technol. Res. Center, Yokogawa Electr. Corp., Tokyo

Volume

15

Issue

3

fYear

2009

Firstpage

528

Lastpage

534

Abstract

Wavelength modulation over 500 kHz by a micromechanically tunable vertical-cavity surface-emitting laser (VCSEL) consisting of an InP-based half-VCSEL chip and a micromachined silicon-on-insulator chip with a concave movable mirror has been demonstrated for the first time. A peak power of 3.5 mW, a tuning range of 55 nm, and a side-mode suppression ratio of about 60 dB have been demonstrated.

Keywords

III-V semiconductors; elemental semiconductors; indium compounds; integrated optics; laser accessories; laser cavity resonators; laser modes; laser tuning; micro-optomechanical devices; optical modulation; optical windows; silicon-on-insulator; surface emitting lasers; InP; concave movable mirror; frequency 500 kHz; half-VCSEL chip; micromachined silicon-on-insulator chip; micromechanically tunable vertical-cavity surface-emitting laser; power 3.5 mW; side-mode suppression ratio; silicon MEMS technology; wavelength 55 nm; wavelength modulation; InP; long-wavelength; microelectromechanical system (MEMS); tunable laser; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2015468

Filename

4907159