InGaAsN metal-semiconductor-metal photodetectors with Modulation-doped heterostructures

Author

Hsu, S.H. ; Su, Y.K. ; Chang, S.J. ; Chen, W.C. ; Tsai, H.L.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

18

Issue

3

fYear

2006

Firstpage

547

Lastpage

549

Abstract

InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al_0.2Ga_0.8As cap layer doping N_d=5times10¹⁶, 9times10¹⁶, 2times10¹⁷, and 6times10¹⁷ cm^-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with N_d=5times10¹⁶, 9times10¹⁶, and 2times10¹⁷ cm^-3, respectively

Keywords

III-V semiconductors; Schottky barriers; dark conductivity; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical fabrication; photodetectors; semiconductor device measurement; semiconductor doping; semiconductor heterojunctions; wide band gap semiconductors; InGaAsN metal-semiconductor-metal photodetectors; InGaAsN-AlGaAs; capacitance-voltage measurements; dark current; effective Schottky barrier heights; modulation-doped heterostructures; thermionic emission theory; Capacitance measurement; Capacitance-voltage characteristics; Carrier confinement; Current measurement; Dark current; Doping; Epitaxial layers; Photodetectors; Schottky barriers; Thermionic emission; InGaAsN; metal–organic chemical vapor deposition (MOCVD); metal–semiconductor–metal photodetectors (MSM-PDs); modulation-doped;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.863989

Filename

1580561