DocumentCode
800509
Title
Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation
Author
Luo, Jun ; Qiu, Zhi-Jun ; Zhang, David Wei ; Hellström, Per-Erik ; Östling, Mikael ; Zhang, Shi-Li
Author_Institution
Sch. of Microelectron., Fudan Univ., Shanghai
Volume
30
Issue
6
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
608
Lastpage
610
Abstract
The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phibn from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600degC. Above this temperature, B-DS at this interface is evident thus keeping phibn high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phibp above 1.0 eV by As-DS.
Keywords
Schottky barriers; boron; carbon; diffusion; semiconductor doping; Schottky barrier heights; beneficial effects; boron diffusion; dopant segregation; interfacial carbon; Carbon implantation; NiSi; Schottky barrier height (SBH); Schottky diode; dopant segregation (DS);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2018285
Filename
4907163
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