The effect of dislocation loops on the light emission of silicon LEDs

Author

Hoang, Tu ; LeMinh, Phuong ; Holleman, Jisk ; Schmitz, Jurriaan

Author_Institution

Group of Semicond. Components, Univ. of Twente, Enschede, Netherlands

Volume

27

Issue

2

fYear

2006

Firstpage

105

Lastpage

107

Abstract

Remarkably strong infrared light emission was recently observed from silicon p⁺-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

Keywords

dislocation loops; elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; LED; Si; integrated optics; integrated optoelectronics; light-emitting diodes; luminescent devices; optoelectronic devices; semiconductor device fabrication; Implants; Ion implantation; Lattices; Light emitting diodes; Optical device fabrication; Probes; Semiconductor devices; Semiconductor diodes; Silicon; Temperature; Dislocation; integrated optics; integrated optoelectronics; light sources; light-emitting diodes; luminescent devices; optoelectronic devices; semiconductor device fabrication; semiconductor devices; silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.862195

Filename

1580596