Title :
Analytical Modeling of Dielectric Pocket Double-Gate MOSFET Incorporating Hot-Carrier-Induced Interface Charges
Author :
Kumari, Vandana ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Madhu
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
In this paper, the impact of interface charges on the performance of a short-channel symmetric dielectric pocket double-gate (DP-DG) MOSFET has been investigated. An analytical drain current model for DP-DG MOSFET has been developed, which is also useful for investigating the impact of dual-material gate on DP-DG architecture. The proposed model is verified using ATLAS 3-D simulator. In addition, exhaustive simulation has been carried out to address the impact of interface charges on the reliability issues of various devices, i.e., DP-DG, double-gate, and dielectric pocket architectures in terms of gate leakage current, electron temperature, and impact of interface charges on the threshold voltage lowering. Analog and digital performances have also been investigated and compared with the other devices.
Keywords :
MOSFET; dielectric materials; hot carriers; leakage currents; semiconductor device models; ATLAS 3D simulator; analytical drain current model; dielectric pocket double gate MOSFET; dual material gate; electron temperature; gate leakage current; hot carrier induced interface charges; short channel MOSFET; threshold voltage; Degradation; Dielectrics; Hot carriers; Logic gates; MOSFET; Materials; Metals; Analytical model; CMOS inverter; dielectric pocket; double gate; dual-material gate; hot-carrier-induced charges;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2013.2278077
