A reliable and manufacturable method to induce a stress of >1 GPa on a P-channel MOSFET in high volume manufacturing

Author

Arghavani, R. ; Xia, L. ; M´Saad, H. ; Balseanu, Mihaela ; Karunasiri, G. ; Mascarenhas, A. ; Thompson, S.E.

Author_Institution

Appl. Mater., Santa Clara, CA, USA

Volume

27

Issue

2

fYear

2006

Firstpage

114

Lastpage

116

Abstract

This letter discusses a reliable and manufacturable integration technique to induce greater than 1 GPa of stress into a p-channel MOSFET, which will be required to increase the drive current beyond 1 mA/μm at the sub-90-nm process generation. Uniaxial compressive stress is introduced into the p-channel by both a selective deposition of SiGe in the source/drain and an engineered 2.5-GPa compressively stressed nitride. The highest to date compressively stressed SiN film is obtained by heavy ion bombardment during the deposition of the film.

Keywords

MOSFET; heavy ion-nucleus reactions; integrated circuit reliability; silicon compounds; stress analysis; 90 nm; MOSFET; P-channel; SiGe; SiN; heavy ion bombardment; high volume manufacturing; mobility enhancement; process generation; selective deposition; strained transistors; stress nitride; stress oxide; tensile silicon; uniaxial compressive stress; Capacitive sensors; Compressive stress; Hydrogen; MOSFET circuits; Manufacturing processes; Plasma temperature; Silicon compounds; Tensile strain; Tensile stress; Thermal stresses; Compressive silicon; Si–Ge; mobility enhancement; strain; strained transistors; stress; stress nitride; stress oxide; tensile silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.862277

Filename

1580599