Title :
Low-temperature electron mobility in Trigate SOI MOSFETs
Author :
Colinge, Jean-Pierre ; Quinn, Aidan J. ; Floyd, Liam ; Redmond, Gareth ; Alderman, John C. ; Xiong, Weize ; Cleavelin, C. Rinn ; Schulz, Thomas ; Schruefer, Klaus ; Knoblinger, Gerhard ; Patruno, Paul
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
Abstract :
Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the ID(VG) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm2/Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.
Keywords :
MOSFET; cryogenic electronics; electron mobility; quantum wires; semiconductor device measurement; silicon-on-insulator; 100 K; 1D subband formation; MOSFET; charge carrier mobility; cryogenic electronics; drain voltage value; gate voltage; low-temperature electron mobility; quantum wires; semiconductor device measurement; silicon-on-insulator technology; subband mobility; trigate SOI; Cryogenic electronics; Electron mobility; Etching; Filling; MOSFETs; Semiconductor device measurement; Semiconductor films; Silicon on insulator technology; Temperature; Voltage; Charge carrier mobility; MOSFETs; cryogenic electronics; quantum wires; semiconductor device measurements; silicon-on -insulator (SOI) technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.862691
