Effects of Oxygen Partial Pressure after Deposition on Crystalline Orientation of Laser Deposited YBa2Cu3O7-x Thin Films

The dependence of the crystal orientation of YBa2Cu3O7-x deposited using an ArF pulsed laser on the post-deposition oxygen partial pressure during cooling was studied. The crystal orientation of films deposited in low oxygen partial pressure was found to change depending on the oxygen partial pressure during cooling after deposition, accompanied by solid phase regrowth. In order to investigate this regrowth behavior, films of different thickness were fabricated by an Ar ion beam-thinning technique, and magnetization measurements were performed.