Direct extraction of substrate network parameters for RF MOSFET modeling using a simple test structure

This letter presents a novel test structure to accurately extract the substrate network parameters for RF MOSFET modeling from two-port measurements. The test structure used in the common-gate configuration isolates the gate network to make the substrate network distinctly accessible to measurements. A methodology is developed to directly extract the substrate network from the measured data. The method is further verified and validated by the excellent match obtained between measured and simulated two-port parameters.