Stress Induced Enhancement of Magnetization Reversal Process of DyFeCo Films With Perpendicular Magnetization

Author

Nakagawa, S. ; Yamada, M. ; Tokuriki, N.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol.

Volume

42

Issue

11

fYear

2006

Firstpage

3773

Lastpage

3775

Abstract

A method to control magnetization reversal in magnetic films with perpendicular magnetic anisotropy was demonstrated in this study. Alloys of rare earth-transition metals (RE-TM) with their extremely large anomalous Hall coefficient and relatively large magnetostriction constants were suitable to observe the stress induced anisotropy using anomalous Hall effect. Stress applied to the RE-TM thin films significantly reduced the perpendicular coercivity and nucleation field of the film in comparison with that of the film in stress-free condition. Dy_x(Fe₉₀Co₁₀)_1-x thin films revealed large Hall voltage and remarkable change in the coercivity under the mechanical tensile stress

Keywords

Hall effect; coercive force; dysprosium compounds; internal stresses; iron compounds; magnetic storage; magnetic thin films; magnetisation reversal; magnetostriction; perpendicular magnetic anisotropy; DyFeCo; ferromagnetic Hall effect; magnetic films; magnetic random access memory; magnetization reversal; magnetoelastic energy; magnetostriction constants; mechanical tensile stress; perpendicular magnetic anisotropy; rare earth-transition metals; Anisotropic magnetoresistance; Coercive force; Hall effect; Iron; Magnetic films; Magnetization reversal; Magnetostriction; Perpendicular magnetic anisotropy; Stress; Transistors; Ferromagnetic Hall effect; magnetic random access memory (MRAM); magnetoelastic energy; rare earth–transition metals (RE-TM); stress-induced magnetic anisotropy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.884247

Filename

1715691