Title :
Electron transit time through depletion layer of GaInAs pn junction
Author :
Smiljanic, M. ; Djuric, Z. ; Lazic, Zarko
Author_Institution :
Inst. for Chem., Technol. & Metall., Belgrade, Yugoslavia
Abstract :
Using an empirical formula for the electron velocity, the transit time through a Ga0.47In0.53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Ga0.47In0.53As layer on InP substrate.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-i-n diodes; p-n homojunctions; semiconductor device models; semiconductor epitaxial layers; Ga 0.47In 0.53As-InP; applied voltage; avalanche photodiode; depletion layer; electron transit time; electron velocity; empirical formula; minimum transit time; modelling; p-i-n photodiodes; p-n junctions; response time; semiconductor epitaxial layers; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890109
