DocumentCode
800823
Title
Dependence of linewidth enhancement factor on crystal orientation in strained quantum well lasers
Author
Ohtoshi, T. ; Kuroda, T. ; Niwa, A. ; Tsuji, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume
6
Issue
12
fYear
1994
Firstpage
1424
Lastpage
1426
Abstract
The linewidth enhancement factor a in strained quantum well (QW) lasers is estimated theoretically for various crystallographic directions. It is found that the a factor in a strained In/sub 0.7/Ga/sub 0.3/As-InP QW laser on a [111] substrate is less than 1.4, much lower than for conventional strained QW lasers on [001] substrates.<>
Keywords
III-V semiconductors; crystal orientation; crystallography; gallium arsenide; indium compounds; laser theory; quantum well lasers; spectral line breadth; In/sub 0.7/Ga/sub 0.3/As-InP QW laser //; crystal orientation; crystallographic directions; linewidth enhancement factor; strained quantum well lasers; Capacitive sensors; Crystalline materials; Crystallography; Laser theory; Optical materials; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Substrates; Wave functions;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.392223
Filename
392223
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