• DocumentCode
    800851
  • Title

    Simple analysis of carrier transport and buildup in separate confinement heterostructure quantum well lasers

  • Author

    Alam, Muhammad ; Lundstrom, Mark

  • Author_Institution
    Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    6
  • Issue
    12
  • fYear
    1994
  • Firstpage
    1418
  • Lastpage
    1420
  • Abstract
    A simple, analytical model for carrier transport and buildup in the separate confinement layer of a quantum well laser is developed. The time constant characterizing the low-frequency roll-off is separated into components describing electron and hole transport and components related to the charge storage effects arising from electron and hole capture. In contrast to previous work, the analysis shows that both the transport and capture related delays are sensitive to the placement of the well within the separate confinement heterostructure and that the carrier concentrations change abruptly across the quantum well.<>
  • Keywords
    carrier density; hole traps; laser theory; quantum well lasers; semiconductor device models; analytical model; carrier buildup; carrier concentrations; carrier transport; charge storage effects; electron capture; electron transport; hole capture; hole transport; low-frequency roll-off; sensitive; separate confinement heterostructure; separate confinement heterostructure quantum well lasers; separate confinement layer; time constant; Analytical models; Carrier confinement; Charge carrier density; Charge carrier processes; Frequency; Laser modes; Potential well; Quantum well lasers; Radiative recombination; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.392225
  • Filename
    392225