DocumentCode
800851
Title
Simple analysis of carrier transport and buildup in separate confinement heterostructure quantum well lasers
Author
Alam, Muhammad ; Lundstrom, Mark
Author_Institution
Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
6
Issue
12
fYear
1994
Firstpage
1418
Lastpage
1420
Abstract
A simple, analytical model for carrier transport and buildup in the separate confinement layer of a quantum well laser is developed. The time constant characterizing the low-frequency roll-off is separated into components describing electron and hole transport and components related to the charge storage effects arising from electron and hole capture. In contrast to previous work, the analysis shows that both the transport and capture related delays are sensitive to the placement of the well within the separate confinement heterostructure and that the carrier concentrations change abruptly across the quantum well.<>
Keywords
carrier density; hole traps; laser theory; quantum well lasers; semiconductor device models; analytical model; carrier buildup; carrier concentrations; carrier transport; charge storage effects; electron capture; electron transport; hole capture; hole transport; low-frequency roll-off; sensitive; separate confinement heterostructure; separate confinement heterostructure quantum well lasers; separate confinement layer; time constant; Analytical models; Carrier confinement; Charge carrier density; Charge carrier processes; Frequency; Laser modes; Potential well; Quantum well lasers; Radiative recombination; Spontaneous emission;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.392225
Filename
392225
Link To Document