Title :
A 1 GHz Bandwidth Low-Pass
ADC With 20–50 GHz Adjustable Sampling Rate
Author :
Hart, Adam ; Voinigescu, Sorin P.
Author_Institution :
Edward S. Rogers, Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
fDate :
5/1/2009 12:00:00 AM
Abstract :
A low-pass continuous-time delta-sigma data converter with adjustable sampling rate from 20-50 GS/s has been demonstrated in a production 165 GHz-fT 130-nm SiGe BiCMOS process. The ADC exploits the high transistor fT of modern silicon technologies to achieve an ENOB of 7 bits over a 500 MHz passband and 6 bits over a 1 GHz passband while consuming 350 mW from a 2.5 V supply (650 mW including on chip clock distribution and output driver); marking the first delta-sigma ADC to reach a bandwidth of 1 GHz. At the system-level, the analysis of a detailed behavioral model brought to light the high dependency of modulator performance on metastability. An analytical expression linking quantizer gain and number of bits to performance was therefore derived and used to estimate the theoretical limitations imposed by metastability.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; analogue-digital conversion; clocks; delta-sigma modulation; semiconductor materials; SiGe; adjustable sampling rate; bandwidth 1 GHz; behavioral model; chip clock distribution; frequency 20 GHz to 50 GHz; low-pass DeltaSigma ADC; low-pass continuous-time delta-sigma data converter; metastability; modulator; power 350 mW; power 650 mW; quantizer gain; voltage 2.5 V; Bandwidth; BiCMOS integrated circuits; Clocks; Continuous production; Germanium silicon alloys; Image sampling; Metastasis; Passband; Performance analysis; Silicon germanium; Analog-digital conversion; SiGe BiCMOS; continuous-time; delta-sigma; excess loop delay; low-pass; metastability; operational amplifier; radio receivers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2015852