Title :
Highly uniform monolithic 1×12 array of InGaAs photodiodes
Author :
Ho, Wen-Jeng ; Wu, Meng-Chyi ; Dai, Ting-Arn ; Lin, Wei ; Tu, Yuan-Kuang
Author_Institution :
Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
1/4/1996 12:00:00 AM
Abstract :
The fabrication and high-uniform performance of monolithically integrated 1×12 arrays of InGaAs/InP planar photodiodes are described. For each device of the packaged array at -5 V, the dark current is ~75 pA, the capacitance is ~2.3 pF, the crosstalk capacitance between adjacent diodes is ~0.36 pF, and the quantum efficiency for each diode is 95% at 1.3 μm and 89% at 1.53 μm. All the deviations of these measurements in an array are within ±1%
Keywords :
III-V semiconductors; capacitance; crosstalk; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; p-i-n photodiodes; -5 V; 0.36 pF; 1.3 to 1.53 micron; 2.3 pF; 75 pA; 89 to 95 percent; InGaAs-InP; OEIC; crosstalk capacitance; dark current; fabrication; packaged array; planar photodiodes; quantum efficiency; uniform monolithic array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960007
