Title :
A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process
Author :
Kidwai, Adil A. ; Fu, Chang-tsung ; Jensen, Jonathan C. ; Taylor, Stewart S.
Author_Institution :
Mobility Wireless Group, Intel Corp., Hillsboro, OR
fDate :
5/1/2009 12:00:00 AM
Abstract :
A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P1dB greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm2 of die area.
Keywords :
CMOS integrated circuits; UHF integrated circuits; losses; semiconductor switches; transceivers; wireless LAN; 802.11b/g/n application; CMOS process; CMOS transmit-receive switch; antenna receiver chain; frequency 2.4 GHz; size 90 nm; substrate isolation technique; transceiver front-end; ultra-low insertion loss T/R switch; voltage 1.2 V; Antenna measurements; Baseband; CMOS process; Insertion loss; Noise figure; Noise measurement; Propagation losses; Receiving antennas; Switches; Transceivers; CMOS; T/R switch; transceiver; wireless LAN;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2015813