A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

Author

Kidwai, Adil A. ; Fu, Chang-tsung ; Jensen, Jonathan C. ; Taylor, Stewart S.

Author_Institution

Mobility Wireless Group, Intel Corp., Hillsboro, OR

Volume

44

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

1352

Lastpage

1360

Abstract

A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P_1dB greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm² of die area.

Keywords

CMOS integrated circuits; UHF integrated circuits; losses; semiconductor switches; transceivers; wireless LAN; 802.11b/g/n application; CMOS process; CMOS transmit-receive switch; antenna receiver chain; frequency 2.4 GHz; size 90 nm; substrate isolation technique; transceiver front-end; ultra-low insertion loss T/R switch; voltage 1.2 V; Antenna measurements; Baseband; CMOS process; Insertion loss; Noise figure; Noise measurement; Propagation losses; Receiving antennas; Switches; Transceivers; CMOS; T/R switch; transceiver; wireless LAN;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2009.2015813

Filename

4907310