Title :
The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications
Author :
Scholten, Andries J. ; Smit, Geert D J ; De Vries, Bart A. ; Tiemeijer, Luuk F. ; Croon, Jeroen A. ; Klaassen, Dirk B M ; Van Langevelde, Ronald ; Li, Xin ; Wu, Weimin ; Gildenblat, Gennady
Author_Institution :
NXP-TSMC Res. Center, Eindhoven
fDate :
5/1/2009 12:00:00 AM
Abstract :
The surface-potential-based compact MOS model PSP is reviewed with special emphasis to features of interest to analog and RF designers. Various aspects of the model are discussed, such as Gummel symmetry, capacitance reciprocity at V DS = 0 V, parasitic resistances, junction modeling, distortion modeling, and noise modeling. Examples from circuit design are used to illustrate the benefits of the PSP model.
Keywords :
MOSFET; capacitance; distortion; integrated circuit design; noise; surface potential; Gummel symmetry; MOSFET; capacitance reciprocity; compact model council; distortion modeling; junction modeling; noise modeling; parasitic resistances; Circuit noise; Circuit simulation; Circuit synthesis; Councils; Government; Information technology; MOSFET circuits; Parasitic capacitance; Radio frequency; Threshold voltage; Compact MOS models; PSP model; distortion; noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2015821
