Title :
A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology
Author :
Chen, Yi-Jan Emery ; Kuo, Wei-Min Lance ; Jin, Zhenrong ; Lee, Jongsoo ; Tretiakov, Youri V. ; Cressler, John D. ; Laskar, Joy ; Freeman, Greg
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/2005 12:00:00 AM
Abstract :
An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V.
Keywords :
1/f noise; Ge-Si alloys; heterojunction bipolar transistors; low-power electronics; microwave oscillators; phase noise; voltage-controlled oscillators; 0.12 micron; 1.6 to 2.5 V; 1/f noise; 200 GHz; 33 GHz; Ka-Band voltage-controlled oscillator; LC-tuned resonators; SiGe; SiGe HBT technology; differential voltage-controlled oscillator; heterojunction bipolar transistor; line inductors; low phase-noise voltage-controlled oscillator; low-power voltage-controlled oscillator; microstrip line; phase noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Phase noise; Silicon germanium; Transmission lines; Tuning; Voltage; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); line inductor; low power; microstrip line; phase noise; silicon–germanium (SiGe); voltage-controlled oscillator (VCO);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.847063
