Enhanced Dynamic Performance of Quantum Dot Semiconductor Lasers Operating on the Excited State

Author

Cheng Wang ; Lingnau, B. ; Ludge, K. ; Even, J. ; Grillot, F.

Author_Institution

Univ. Eur. De Bretagne, Rennes, France

Volume

50

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

723

Lastpage

731

Abstract

The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55 μm, more attractive for direct modulation in high-speed optical communication systems.

Keywords

III-V semiconductors; chirp modulation; indium compounds; optical modulation; quantum dot lasers; refractive index; semiconductor quantum dots; InAs-InP; chirp-to-power ratio; excited state lasing laser; ground-state lasing laser; high-speed optical communication systems; indium arsenide-indium phosphide; linewidth enhancement factor; off-resonant states; optical modulation dynamic enhancement; quantum dot semiconductor lasers; rate equation model; refractive index change; wavelength 1.55 mum; Frequency modulation; Laser modes; Mathematical model; Quantum dot lasers; Semiconductor laser; modulation dynamics; quantum dot;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2335811

Filename

6848820