Title :
Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model
Author :
Liang, Qingqing ; Andrews, Joel M. ; Cressler, John D. ; Niu, Guofu
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
5/1/2005 12:00:00 AM
Abstract :
A frequency-domain lumped-nonlinear-source behavioral model is presented. This generalized two-port nonlinear model is used to characterize the linearity of either RF devices or circuits. Similar to two-port ac behavioral models (i.e., using S-, Y-, Z-, or H-parameters), this nonlinear model supports combinations such as shunt, series, and cascade, and thus is suitable for systematic analysis. This model is then applied to analyze the impact of harmonic impedance on the second-order intermodulation and third-order intermodulation of a state-of-the-art SiGe HBTs and circuits. Simple and general linearity expressions are then derived. Harmonic load-pull simulations and measurements are used to demonstrate the usefulness of the proposed analysis technique.
Keywords :
Ge-Si alloys; frequency-domain analysis; heterojunction bipolar transistors; lumped parameter networks; nonlinear network analysis; radiofrequency integrated circuits; SiGe HBT; Volterra series; behavioral models; harmonic impedance; harmonic load-pull; intermodulation distortion; linearity optimization; lumped-nonlinear source model; radiofrequency integrated circuit; systematic linearity analysis RFIC; Analytical models; Circuit simulation; Frequency domain analysis; Germanium silicon alloys; Harmonic analysis; Impedance; Linearity; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Behavioral model; Volterra series; harmonic load–pull; linearity optimization; nonlinear source;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2005.847101