Title :
A 1024-QAM Analog Front-End for Broadband Powerline Communication Up to 60 MHz
Author :
Bauwelinck, Johan ; De Backer, Els ; Mélange, Cedric ; Torfs, Guy ; Ossieur, Peter ; Qiu, Xing-Zhi ; Vandewege, Jan ; Horvath, Stephan
Author_Institution :
Dept. of Inf. Technol. INTEC/ IMEC, Ghent Univ., Ghent
fDate :
5/1/2009 12:00:00 AM
Abstract :
A high performance analog front-end (AFE) for broadband powerline communication between 1.6 and 60 MHz is presented. The frequency division multiplexing AFE supports optimum channel selection, avoids disturbing RF signals and allows co-existence with other users of the spectrum. The direct-conversion receiver operates linearly up to a + 18 dBm input level. Tunable low-pass filters, integrated into the receive path, support a wide class of service requirements by channel bandwidth selection. The dynamic range is 99.5 dB for 2 MHz channels, and 90.5 dB for 16 MHz channels. Error vector magnitude measurements are presented for a single-carrier 1024-QAM and a 1024-carrier 64-QAM signal as function of frequency and channel attenuation. For 1024-QAM, the error vector magnitude (EVM) is below or equal to 1.2% rms up to 60 dB of attenuation, whereas the 1024-carrier 64-QAM performs well up to 80 dB of attenuation. The presented chip was fabricated in a 0.25 mum SiGe BiCMOS process, and the measured power consumption from a single 2.5 V supply is 668 mW.
Keywords :
BiCMOS integrated circuits; broadband networks; quadrature amplitude modulation; telecommunication power supplies; BiCMOS process; QAM; SiGe; analog front end; broadband powerline communication; error vector magnitude; frequency 60 MHz; power consumption; size 0.25 mum; Attenuation measurement; Bandwidth; BiCMOS integrated circuits; Broadband communication; Dynamic range; Frequency division multiplexing; Frequency measurement; Germanium silicon alloys; Low pass filters; Silicon germanium; Active filter; analog front-end; filter tuning; low-noise amplifier; mixer; powerline communications; transceiver; variable gain amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2017008