• DocumentCode
    80178
  • Title

    FDFD Modeling of Signal Paths With TSVs in Silicon Interposer

  • Author

    Biancun Xie ; Swaminathan, Madhavan

  • Author_Institution
    Interconnect & Packing Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    4
  • Issue
    4
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    708
  • Lastpage
    717
  • Abstract
    This paper proposes an efficient method to model signal paths with through-silicon vias (TSVs) in silicon interposer for 3-D systems. The proposed method utilizes 3-D finite-difference frequency-domain (FDFD) method to model the redistribution layer transmission lines to capture the parasitic effects of multiple transmission lines on lossy silicon interposer. TSVs are modeled using an integral equation based solver, which uses cylindrical modal basis functions. A new formulation on incorporating multiport network into 3-D FDFD formulation is presented to include the parasitic effects of TSV arrays into the system matrix. The overall matrix is divided into several subdomains and solved by a divide-and-conquer approach in a parallel manner. The accuracy and efficiency of the proposed method are validated by comparing with 3-D full-wave simulations.
  • Keywords
    divide and conquer methods; elemental semiconductors; finite difference methods; frequency-domain analysis; integral equations; integrated circuit interconnections; silicon; three-dimensional integrated circuits; transmission lines; 3D FDFD method; 3D finite-difference frequency-domain; 3D full-wave simulations; Si; TSV; cylindrical modal basis functions; divide-and-conquer approach; integral equation; lossy silicon interposer; multiple transmission lines; multiport network; parasitic effects; signal paths; through silicon vias; Couplings; Equations; Mathematical model; Ports (Computers); Power transmission lines; Silicon; Through-silicon vias; 3-D finite-difference frequency domain (FDFD); divide and conquer; multiport network; redistribution layer (RDL); silicon interposer; through-silicon via (TSV);
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2013.2297154
  • Filename
    6727465