Title :
Application of III-V power devices for DC/DC power conversion
Author :
Ajram, S. ; Kozlowski, R. ; Salmer, G.
Author_Institution :
Inst. d´´Electronique et de Microelectronique du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
1/4/1996 12:00:00 AM
Abstract :
The capabilities of GaAs MESFETs and Si MOSFETs as high-frequency switches for DC-DC power converters up to 250 MHz are compared by using SPICE simulation. The theoretical predictions are validated by comparison with experimental results obtained on a non-optimised hybrid circuit. Potential superiority of GaAs devices is clearly shown
Keywords :
DC-DC power convertors; III-V semiconductors; field effect transistor switches; gallium arsenide; power MESFET; power semiconductor switches; 250 MHz; DC/DC power conversion; GaAs; GaAs MESFETs; III-V power devices; SPICE simulation; Si; high-frequency switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960039
