DocumentCode
802004
Title
Application of III-V power devices for DC/DC power conversion
Author
Ajram, S. ; Kozlowski, R. ; Salmer, G.
Author_Institution
Inst. d´´Electronique et de Microelectronique du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume
32
Issue
1
fYear
1996
fDate
1/4/1996 12:00:00 AM
Firstpage
67
Lastpage
68
Abstract
The capabilities of GaAs MESFETs and Si MOSFETs as high-frequency switches for DC-DC power converters up to 250 MHz are compared by using SPICE simulation. The theoretical predictions are validated by comparison with experimental results obtained on a non-optimised hybrid circuit. Potential superiority of GaAs devices is clearly shown
Keywords
DC-DC power convertors; III-V semiconductors; field effect transistor switches; gallium arsenide; power MESFET; power semiconductor switches; 250 MHz; DC/DC power conversion; GaAs; GaAs MESFETs; III-V power devices; SPICE simulation; Si; high-frequency switches;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960039
Filename
490735
Link To Document