Effect of Gate-Drive Circuits on GTO Thyristor Characteristics

This paper deals with the effects of gate drive circuits on turn-on and turn-off characteristics of GTO thyristors. The turn-on methods are outlined and their effects on switching performance are discussed. The turn-off characteristics and the failure modes associated with the storage, fall, tailing, and avalanche periods are presented. Solutions to failure modes are outlined. Both direct and indirect gate drive circuits are presented. The effects of ideal voltage source and series insertion of gate inductance to storage, fall, tailing, and avalanche breakdown period of the GTO thyristors are studied and compared. The suitability of using certain types of gate drive circuits for certain GTO thyristors is discussed.